| 用俄歇参数法研究SiO2／Si界面层硅元素过渡态 |
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| 引用本文： | 刘芬,王忠燕.用俄歇参数法研究SiO2／Si界面层硅元素过渡态[J].分析测试学报,1993,12(6):74-77. |
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| 作者姓名： | 刘芬 王忠燕 |
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| 作者单位： | 北京理化分析中心，北京理化分析中心，北京理化分析中心，北京理化分析中心，北京理化分析中心 北京 100081，北京 100081，北京 100081，北京 100081，北京 100081 |
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| 摘 要： | 本文报道了俄歇参数法用于ＳｉＯ２／Ｓｉ界面层硅过渡态的研究。使用一种新的ＡｌＫα－ＡｇＬα混合Ｘ射线激发源，获得了界面层上Ｓｉ２Ｐ，ＳｉＫＬＬ谱峰。给出了从表面到界面硅的化学状态变化与俄歇参数值。
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| 关 键 词： | 俄歇参数 硅 二氧化硅 过渡态 界面 |
Study of Suboixdes SiO_x on the SiO_2 Si Interface by Auger Parameter and XPS |
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| Liu Fen,Wang zhongyan,Chen Ying,Zhao ruquan,Hu xingzhong Beijing Center for Physical and Chemical Analysis,Beijing.Study of Suboixdes SiO_x on the SiO_2 Si Interface by Auger Parameter and XPS[J].Journal of Instrumental Analysis,1993,12(6):74-77. |
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| Authors: | Liu Fen Wang zhongyan Chen Ying Zhao ruquan Hu xingzhong Beijing Center for Physical and Chemical Analysis Beijing |
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| Institution: | Liu Fen,Wang zhongyan,Chen Ying,Zhao ruquan,Hu xingzhong Beijing Center for Physical and Chemical Analysis,Beijing,100081 |
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| Abstract: | The suboxides SiO_x on the SiO_2/Si interface were studied by the Auger parameter method.Using a new mixed X-ray source of AlK-AgL, Si 2p and Si KLL peaks on the interface wererecorded. From the surface to the interface, variations in silicon chemical states and Auger pa-rameters were reported. |
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| Keywords: | Auger parameter X-ray peotoelectron spectroscopy Silicon |
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