| GaP衬底上分子束外延Si时P偏析的抑制 |
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| 引用本文： | 蒋维栋,樊永良,盛篪,俞鸣人.GaP衬底上分子束外延Si时P偏析的抑制[J].物理学报,1990,39(9):1429-1434. |
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| 作者姓名： | 蒋维栋 樊永良 盛篪 俞鸣人 |
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| 作者单位： | 复旦大学表面物理实验室,上海200433 |
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| 基金项目： | 国家自然科学基金;国家教育委员会博士点基金资助的课题 |
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| 摘 要： | 用Si分子束外延技术在GaP(111)衬底上生长Si时,发现Si外延层表面存在P偏析,根据俄歇电子能谱(AES),反射式高能电子衍射(RHEED)在一系列不同实验条件下的结果,本文对P偏析产生的机制、外延层表面再构与P偏析之间的关系作了分析和讨论,得出偏析主要来自外延Si原子与衬底P元素之间的相互交换。在此基础上提出了一种能有效地抑制P偏析同时又改善外延层质量的新的Si/GaP(111)异质结制备方法。
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| 关 键 词： | GaP衬底 分子束 外延 硅 P偏析 |
| 收稿时间： | 1989-11-13 |
ELIMINATION OF P SEGREGATION DURING MOLECULAR BEAM EPITAXIAL GROWTH OF Si ON GaP (111) SUBSTRATE |
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| JIANG WEI-DONG,FAN YONG-LIANG,SHENG CHI and YU MING-REN.ELIMINATION OF P SEGREGATION DURING MOLECULAR BEAM EPITAXIAL GROWTH OF Si ON GaP (111) SUBSTRATE[J].Acta Physica Sinica,1990,39(9):1429-1434. |
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| Authors: | JIANG WEI-DONG FAN YONG-LIANG SHENG CHI and YU MING-REN |
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| Abstract: | The segregation of P from substrate to the surface of Si epilayer has been observed during MBE preparation of Si/GaP (111) heterostructure. In this paper, the mechanism of P segregation and relationship between the surface reconstruction and segregation are discussed, according to the results of AES and RHEED under different experimental conditions. The conclusion is that the segregation of P was caused by substituting P atom with Si deposited atom during growth. From this, a new method for eliminating the segregation of P efficiently is proposed. |
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