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Method and mechanism of vapor phase treatment–total reflection X-ray fluorescence for trace element analysis on silicon wafer surface
Authors:Hikari Takahara  Yoshihiro Mori  Ayako Shimazaki  Yohichi Gohshi
Institution:a ISO TC201 WG2, c/o Rigaku Corp., 14-8 Akaoji-cho, Takatsuki, Osaka 579-1146, Japan;b ISO TC201 WG2, 700-118 Ohkawachi, Shunan, Yamaguchi 745-0651, Japan;c ISO TC201 WG2/Corporate Research and Depelopment Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan;d ISO TC201 WG2/Tsukuba University, 1-1-1, Tennodai, Tsukuba, Ibaraki 305-8571, Japan
Abstract:Vapor phase treatment (VPT) is a pretreatment with hydrofluoric acid vapor to raise the sensitivity of total reflection X-ray fluorescence spectroscopy (TXRF) for trace metal analysis on silicon wafers. The International Organization for Standardization/Technical Committee 201/Working Group 2 (ISO/TC201/WG2) has been investigating the method to analyze 109 atoms/cm2 level of metallic contamination on the silicon wafer surface. Though VPT can enhance the TXRF signal intensity from the metallic contamination, it has turned out that the magnitude of the enhancement varies with the type of methods and the process conditions. In this study, approaches to increase TXRF intensity by VPT are investigated using a fuming chamber in an automated VPD instrument. Higher signal intensity can be obtained when condensation is formed on the sample surface in a humidifying atmosphere and with a decreasing stage temperature. Surface observations with SEM and AFM show that particles with ~ 4 μm in diameter are formed and unexpectedly they are dented from the top surface level.
Keywords:TXRF  VPT  Trace metallic contamination analysis  Semiconductor  Silicon wafer
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