Surface morphology of the Si(310) substrate used for molecular beam epitaxy of CdHgTe: I. Clean Si(310) surface |
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| Authors: | M V Yakushev D V Brunev K N Romanyuk A E Dolbak A S Deryabin L V Mironova Yu G Sidorov |
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| Institution: | (1) Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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| Abstract: | The effect of vacuum annealing on the morphology of hydrogenated and oxidized Si(310) surfaces is investigated by scanning tunnel microscopy, reflection high-energy electron diffraction, and low-energy electron diffraction. It is found that after desorption of a passivating coating, the surface has a strongly developed profile formed preferentially by steps two monolayers in height. Annealing at a temperature of 900±15°C with subsequent abrupt cooling leads to faceting of the surface by (510) planes. The presence of steps two monolayers in height on the Si(310) surface allows one to use Si crystals oriented along the (310) plane as the substrate for heteroepitaxy of the II–VI compounds. |
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