薄膜结构性能变化中的"温度临界点"

本文先从理论角度说明了薄膜结构性能变化中存在"温度临界点",然后借助于XRD、Raman等测试仪器研究分析了Si薄膜、AZO薄膜在晶化过程、晶粒长大过程以及性能突变中的"温度临界点".结果显示:薄膜结构性能变化中确实存在"温度临界点";在"温度临界点"前后薄膜结构性能的变化规律曲线出现拐点.进而推论:薄膜的结构性能在随温度变化中"温度临界点"可能不止一个.

Critical Temperature Point in the Changing Process of Thin Films' Structure and Properties

This article illuminates the existence of a critical temperature point in the changing process of thin films' structure and properties from the theoretical perspective.And then with the aid of such measuring instruments as XRD and Raman,the critical temperature points in the process of crystalline of silicon thin films and growth of their grains and changing properties of AZO thin film were analyzesd.The findings of the experiment show that there exists a critical temperature point in the changing process of thin films' structure and properties;and that the changing laws are different before and after that point.Thus the conclusion has been made that there might exist more than one such critical temperature point.