Investigation of optically generated kink effect in GaAs-based heterojunction phototransistors |
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| Authors: | H. A. Khan A. A. Rezazadeh |
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| Affiliation: | (1) Department of Physics, Jadavpur University, Kolkata, 700 032, India;(2) Materials Engineering Laboratory, University of Oulu, Oulu, FIN-90014, Finland;(3) Present address: Metallurgical and Materials Engineering Department, Faculty of Petroleum & Mining Engineering, Suez Canal University, Suez, 43721, Egypt;(4) Department of Physics, Ramananda College, Bishnupur, West Bengal, PIN-722 122, India;(5) Microelectronics and Materials Physics Laboratories, University of Oulu, Oulu, Finland |
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| Abstract: | Interaction between stacking faults (SFs) in pure Mg has been studied using density functional theory. The present results show that strong interaction between SFs can be extended up to several close-packed atomic layers. Especially, the interaction energies increase and decrease alternatively with the increase of SFs separation. Two distinct interaction models between SFs are proposed based on shear characteristics of SFs with different numbers of separating layers. The calculated electronic structures further reveal the underlying interaction mechanisms. |
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