退火温度对高介电常数Ta2O5薄膜电学性能的影响

利用磁控溅射法在硅(Si)衬底上沉积了Ta2O5薄膜,对薄膜进行了不同温度的退火处理,并利用X射线衍射仪对薄膜的微观结构进行了分析.然后在Si的背面和介电薄膜的上面沉积Pt电极,组成了金属—氧化物—半导体( MOS)电容器,对不同温度下退火得到的薄膜制备的MOS电容器的电学性能进行了研究.结果表明,薄膜在700℃开始结...

Effects of annealing temperature on the electrical properties of high permittivity tantalum pentoxide films

Ta2O5 films were deposited on the silicon substrate by magnetron sputtering method,and then the prepared films were annealed at different temperatures.The microstructure of prepared films were analyzed by X-ray diffraction.Metal-oxide-semiconductor(MOS) capacitors were fabricated by sputtering a Pt electrode on the top of dielectric films and another Pt electrode on the back of silicon substrate.The electrical properties of MOS capacitors prepared with the prepared films annealed at different temperatures were measured.The results show that the film begins to crystallize at 700 ℃ and its structure is tetragonal β-Ta2O5.The capacitor fabricated with the film annealed at 700 ℃ possesses the best properties: the highest permittivity of 34.9,and the lowest leakage current density of 1.87×10-6 A/cm2 with the applied voltage of 1 V.