On the generation of MCs+ ions in SIMS with Cs+ primary beams |
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Authors: | Hans Oechsner |
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Affiliation: | Institute for Surface and Thin Film Analysis and Department of Physics, Technical University of Kaiserslautern, Kaiserslautern, Germany |
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Abstract: | The formation of MCs+ secondary ions in SIMS operated with Cs+ ion beams is discussed on the basis of a well-confirmed quadratic dependence of MCs+ yields on the atomic polarizabilities of elements M contained in semiconductor samples. This behavior is understood by the generation of a dipole induced in M by the positive charge of a neighboring Cs+ projectile and the mutual induction of a dipole in Cs+, both dipoles depending on the atomic polarizability of M. An evaluation of the dipole–dipole interaction energy indicates that MCs+ ions generated at the target are emitted according to the direct emission model (DEM). This mechanism is in contrast with an association model where constituents of MCs+ are assumed to combine after their independent sputter emission. |
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Keywords: | atomic polarization MCs+ secondary ions SIMS |
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