One-dimensional single (In,Ga)As quantum dot arrays formed by self-organized anisotropic strain engineering |
| |
Authors: | T Mano R Ntzel G J Hamhuis T J Eijkemans J H Wolter |
| |
Institution: | eiTT/COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O.Box 513, Eindhoven 5600MB, The Netherlands |
| |
Abstract: | Well-defined one-dimensional single (In,Ga)As quantum dot (QD) arrays have been successfully formed on planar singular GaAs (1 0 0) in molecular beam epitaxy by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) template. The distinct stages of template formation, which govern the uniformity of the QD arrays, are directly imaged by atomic force microscopy (AFM). The AFM results reveal that excess strain accumulation causes fluctuations of the QWR template and the QD arrays. By reducing the amount of (In,Ga)As and increasing the GaAs separation layer thickness in each SL period, the uniformity of the QD arrays dramatically improves. The single QD arrays are straight over more than 1 μm and extended to 10 μm length. Capped QD arrays show clear photoluminescence emission up to room temperature. |
| |
Keywords: | Author Keywords: InGaAs Quantum dot Ordering Molecular beam epitaxy |
本文献已被 ScienceDirect 等数据库收录! |
|