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用于集成电路低压压敏陶瓷材料的研究
引用本文:朱传琴,张录周,范坤泰.用于集成电路低压压敏陶瓷材料的研究[J].半导体技术,2006,31(8):603-606.
作者姓名:朱传琴  张录周  范坤泰
作者单位:山东电力高等专科学校,济南,250002;山东沂光电子公司,山东,临沂,276003;山东大学,信息科学与工程学院,济南,250061
摘    要:介绍了低压压敏陶瓷的导电机理、研究途径,实验并分析了掺入TiO2、籽晶和稳定剂Ta2O5对材料性能的影响及作用原理,做出了适合集成电路用的低压压敏陶瓷材料.

关 键 词:低压压敏陶瓷  晶粒  晶界  富铋相
文章编号:1003-353X(2006)08-0603-04
收稿时间:2006-03-14
修稿时间:2006年3月14日

Research of Low Voltage Varistor Ceramic Material for IC
ZHU Chuan-qin,ZHANG Lu-zhou,FAN Kun-tai.Research of Low Voltage Varistor Ceramic Material for IC[J].Semiconductor Technology,2006,31(8):603-606.
Authors:ZHU Chuan-qin  ZHANG Lu-zhou  FAN Kun-tai
Institution:1. Shandong Electric Power College, Jinan 250002, China; 2.Yiguang Electricity Ltd. Co., Linyi 276003,China; 3. School of lnformation Science and Engineering Shandong University, Jinan 250061, China
Abstract:The transmitting electric current mechanism and the development of low voltage varister ceramic were introduced. The experiments and analyzing on the mechanism of doping TiO2 to the material, affecting the material by the crystalline, grain, and a steady Ta2O5 chemical preparation were done. The low voltage varister ceramic material was successfully made for IC manufacturing.
Keywords:low voltage varister ceramic  grain  crystal interlayer  rich Bi layer
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