| 1.25μm近红外场助光阴极材料InGaAsP/InP的液相外延 |
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| 引用本文： | 王存让 李晋闽. 1.25μm近红外场助光阴极材料InGaAsP/InP的液相外延[J]. 光子学报, 1992, 21(4): 337-342 |
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| 作者姓名： | 王存让 李晋闽 |
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| 作者单位： | 中国科学院西安光学精密机械研究所, 710068 |
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| 摘 要： | 本文简要阐述了近红外场助光阴极的原理及对外延材料的要求。利用液相外延工艺并采用独特的掺杂技术生长出了用于近红外光电阴极的InP/InGaAsP 异质结结构。显微分析。x射线双晶衍射、电子探针、电化学C-V等测试结果表明外延层的结晶质量及电学性能符合设计的特殊要求,在此基础上制作的场助光电阴极量子效率在1.20μm处为3.5×10-4,其响应波长可达1.25μm。
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| 关 键 词： | 液相外延 场助光阴极 红外 半导体材料 |
| 收稿时间： | 1991-08-24 |
LIQUID PHASE EPITAXY OF InGaAsP/InP FOR 1.25μm NEAR-INFRARED FIELD-ASSISTED PHOTOCATHODE |
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| Wang Cunrang,Li Jinmin,Gauo Lihui,Hou Xun,Li Xiangmin,Zhang Gongli,Gao Hongkai. LIQUID PHASE EPITAXY OF InGaAsP/InP FOR 1.25μm NEAR-INFRARED FIELD-ASSISTED PHOTOCATHODE[J]. Acta Photonica Sinica, 1992, 21(4): 337-342 |
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| Authors: | Wang Cunrang Li Jinmin Gauo Lihui Hou Xun Li Xiangmin Zhang Gongli Gao Hongkai |
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| Affiliation: | Xi’an Institute of Optics and Precision Mechanics, Academia Sinica, Xian 710068 |
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| Abstract: | The principle of near-infrared field-assisted photocathode and the requirements for materials are described in this paper.The InGaAsP/InP hetero-junction structure has been fabricated by using liquid phase epitaxy process with a specific doping technique.Its crystallography and electrical properties are characterized by microscopy, x-ray double crystal diffraction, electron microprobe and electrochemical C-V analysis.A field-assisted reflective photocathode forme ed with this epitaxial materials offers wavelength response to a range of 1.25 um and quantum effic ciency of 3.5 ? 10-4 at 1.20 um. |
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| Keywords: | LPE Field-assisted photocathode Infrared Semiconductor materials |
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