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Getter formation in silicon by implantation of antimony ions |
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| Authors: | P K Sadovskii A R Chelyadinskii V B Odzhaev M I Tarasik A S Turtsevich Yu B Vasiliev |
| Institution: | 1. Belarusian State University, pr. Nezavisimosti 4, Minsk, 220030, Belarus 2. Open Joint Stock Company “Integral,”, ul. Kazintsa 121A, Minsk, 220108, Belarus |
| Abstract: | A porous silicon layer as a getter of uncontrolled impurities has been prepared by implantation of Sb+ into silicon and subsequent thermal treatments. The lifetime of nonequilibrium charge carriers in n- and p-type silicon wafers with a getter layer is 3–4 times longer than that without a getter. |
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