Interband transitions and electronic Raman continuum in systems with strong inelastic scattering: Applications to YBa2Cu3O7-δ

We consider a model for the electronic Raman continuum which takes into account strong inelastic scattering and interband transitions. Calculations are based on four-vertex Raman scattering diagrams (Kawabata formalism) within the RPA for Coulomb interaction and the ladder diagram Bethe-Salpeter equation for the vertex. We apply this method to an analysis of the nature of the electronic Raman continuum in the normal state of the high-T _c superconductor YBa₂Cu₃O₇. In numerical calculations we take into account all the self-energy effects and make simulations for vertex corrections assuming that inelastic scattering is due to electron-phonon interaction. Theab-plane polarized continuum contains a large contribution from interband processes and does not depend strongly on temperature and inelastic scattering strength. The in-plane anisotropy is determined by interband transitions rather than by anisotropy of the Fermi surface. The ZZ continuum contains only weak contribution from interband transitions. It can be crudely described within a single band model with inelastic scattering and is strongly dependent on the relaxation rates of inelastic scattering. The nature of the oxygen-deficiency dependence of the Raman spectra is also commented upon.