Field emission investigations of RuO2-doped SnO2 wires |
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| Authors: | Ashok B Bhise Niranjan S Ramgir Imtiaz S Mulla Dilip S Joag |
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| Institution: | a Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007, India
b Physical and Materials Chemistry Division, National Chemical Laboratory, Pune 411 008, India |
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| Abstract: | Field emission studies of a bunch and a single isolated RuO2:SnO2 wire have been performed. A current density of 5.73 × 104 A/cm2 is drawn from the single wire emitter at an applied field of 8.46 × 104 V/μm. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 μA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO2:SnO2 wires offer advantages as field emitters for many potential applications. |
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| Keywords: | Field emission Doped semiconductor Field enhancement factor SnO2 RuO2 |
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