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Optical measurements of silicon wafer temperature |
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| Authors: | K Postava M Aoyama T Yamaguchi |
| Institution: | a Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu 432-8011, Japan b Department of Physics, Technical University of Ostrava, 17 listopadu 15, 708 33 Ostrava-Poruba, Czech Republic c Department of Physics, University of Pardubice, Studentská 84, 532 10 Pardubice, Czech Republic d Komatsu Ltd., Research Division, 1200 Manda, Hiratsuka, Kanagawa 254-8567, Japan |
| Abstract: | An optical technique for precise, non-contact, and real time measurement of silicon wafer temperature that uses the polarized reflectivity ratio Rp/Rs is described. The proposed method is based on temperature dependence of the optical functions of silicon. Expected strong temperature sensitivity is obtained near band gap. Simultaneous monitoring of temperature and oxide layer thickness is discussed using measurements at four wavelength 365 nm, 405 nm, 546 nm, and 820 nm. |
| Keywords: | 07 20 Dt 78 20 Ci 78 40 Fy 07 60 Fs |
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