|
|||||
|
|
Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes |
|
| Authors: | O Uteza B Bussière F Canova P Delaporte M Sentis |
| Institution: | a LP3 CNRS - Université de la Méditerranée, 163 Avenue de Luminy - C. 917, 13288 Marseille Cedex 9, France b Amplitude Technologies, 2 rue du Bois Chaland, CE2926, 91029 Evry Cedex, France c LOA, ENSTA - Ecole Polytechnique, Chemin de la Hunière, 91761 Palaiseau Cedex, France |
| Abstract: | The surface laser-induced damage threshold fluence of sapphire is determined under various experimental conditions concerning the material irradiation (femtosecond, picosecond and nanosecond temporal regimes) and preparation (surface state). The results are of interest for optimising laser micromachining processes and for robust operation of high-peak power femtosecond Ti:sapphire laser chains. |
| Keywords: | 42 70 Hj 77 84 &minus s |
| 本文献已被 ScienceDirect 等数据库收录！ | |