Fabrication of pulsed-laser deposited V-W-Nd mixed-oxide films |
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Authors: | Yusuke Iida |
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Affiliation: | Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan |
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Abstract: | V-W-Nd mixed-oxide films were prepared by pulse-laser deposition (PLD) technique from the targets sintered at different temperatures. X-ray photoelectron spectroscopy (XPS) data indicate that the films fabricated from the targets sintered at low temperature were composed of various mixed valences. Raman spectroscopy shows that V-W-Nd films were composed of the vanadates as NdVO4, and the W6+ doping supplements the formation of vanadate. Atomic force microscopy (AFM) image of the films fabricated from the target sintered at 923 K reveals the average particle size is estimated around 86 nm. The surface morphology of the films roughness shows a dramatic change at 923-943 K. |
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Keywords: | V2O5 WO3 Nd2O3 Thin film Dopant material Pulsed-laser deposition |
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