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Anatase TiO2 films based CO gas sensor: Film thickness, substrate and temperature effects |
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| Authors: | Ibrahim A Al-Homoudi R Naik G Newaz |
| Institution: | a Institute of Manufacturing Research, Wayne State University, Detroit, MI 48202, USA b Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202, USA c Department of Physics and Astronomy, Wayne State University, Detroit, MI 48202, USA d Department of Mechanical Engineering, Wayne State University, Detroit, MI 48202, USA |
| Abstract: | Electrical response of anatase TiO2 films is discussed for different concentrations of CO gas (20-100 ppm) in a nitrogen gas ambient. We investigated temperature (100-300 °C) and film thickness (100-1000 nm) effects for films deposited on glass, sapphire (0 0 0 1) and, Si(1 0 0) substrates. In general, there is a drop in resistance of the device when exposed to CO gas. Films deposited on sapphire showed a larger decrease in the resistance at 300 °C compared to those deposited on glass and silicon substrates. However, films grown on glass and silicon substrates showed a larger decrease in the resistance values for temperature around 200 °C when CO (ppm) values are greater than 40. The change in resistance of the films varies as square root of the CO gas concentration at 200 °C for films deposited on all the three substrates. In general, the decrease in resistance for thicker films is large compared to thinner ones, indicating participation of the bulk in the detection of CO gas. In the presence of O2, film loses its sensitivity to CO gas when the concentration level of O2 approaches 1800 ppm. |
| Keywords: | Anatase Titanium oxide Thin film Carbon monoxide Sputtering |
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