Field electron emission improvement of ZnO nanorod arrays after Ar plasma treatment |
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Authors: | Chun Li Guojia Fang Longyan Yuan Jun Li Xingzhong Zhao |
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Affiliation: | a Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, and Department of Physics, Wuhan University, Wuhan 430072, PR China b State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, PR China c Department of Electronic Engineering, Tsinghua University, Beijing 100084, PR China |
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Abstract: | Vertically well-aligned single crystal ZnO nanorod arrays were synthesized and enhanced field electron emission was achieved after radio-frequency (rf) Ar plasma treatment. With Ar plasma treatment for 30 min, flat tops of the as-grown ZnO nanorods have been etched into sharp tips without damaging ZnO nanorod geometrical morphologies and crystallinity. After the Ar ion bombardment, the emission current density increases from 2 to 20 μA cm−2 at 9.0 V μm−1 with a decrease in turn-on voltage from 7.1 to 4.8 V μm−1 at a current density of 1 μA cm−2, which demonstrates that the field emission of the as-grown ZnO nanorods has been efficiently enhanced. The scanning electron microscopy (SEM) results, in conjunction with the results of transmission electron microscopy (TEM), Raman spectroscopy and photoluminescence observation, are used to investigate the mechanisms of the field emission enhancement. It is believed that the enhancements can be mainly attributed to the sharpening of rod tops, and the decrease of electrostatic screening effect. |
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Keywords: | 79.70+q 81.05.Dz 81.65.Cf |
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