Influence of the plasma parameters and nitrogen addition on the electrical characteristics of DLC films deposited by inductively coupled plasma deposition |
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Authors: | Ana Paula Mousinho Ronaldo Domingues Mansano |
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Affiliation: | Laboratório de Sistemas Integráveis do Departamento de Sistemas Eletrônicos da Escola Politécnica da Universidade de São Paulo, av. Prof. Luciano Gualberto, 158 trav. 3, CEP 05508-900, São Paulo, SP, Brazil |
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Abstract: | This work has been based on studies of the plasma parameters influence and nitrogen addition over on the electrical characteristics of diamond-like carbon (DLC) films deposited by inductively coupled plasma deposition (ICP) system. For these studies, it was used a mixture of methane with different flows of nitrogen, two different pressure processes and three different coil powers. The nitrogenated DLC films, had presented a great variation in their electric and structural properties with the nitrogen variation in the plasma. With the nitrogen addition, an increase in its dielectric constant of 1.7-7.4 to concentration of the 40% of the nitrogen has occurred. For high nitrogen concentrations (80% of nitrogen), the dielectric constant decreases (of 7.4 for 5.0). The resistivity of the films decreases with the nitrogen concentration increase (1.2 × 109 Ω cm). Attributing semiconductors characteristics to DLC films. With the increase of nitrogen concentration, the sp3 hybridization increases, too. These characteristics were excellent for innumerable applications in electronic devices. |
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Keywords: | 71.23.Cq 77.55.+f 78.30.Hv |
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