Effect of substrate bias voltages on the diffusion barrier properties of Zr-N films in Cu metallization |
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Authors: | Ying Wang Chunhui Zhao Fei Cao |
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Institution: | a School of Electronics and Information Engineering, Harbin Engineering University, 150001 Harbin, China b State-Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, 710049 Xi’an, China |
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Abstract: | Zr-N diffusion barriers were deposited on the Si substrates by rf reactive magnetron sputtering under various substrate bias voltages. Cu films were subsequently sputtered onto the Zr-N films by dc pulse magnetron sputtering without breaking vacuum. The Cu/Zr-N/Si specimens were then annealed up to 650 °C in N2 ambient for an hour. The effects of deposition bias on growth rate, film resistivity, microstructure, and diffusion barrier properties of Zr-N films were investigated. An increase in negative substrate bias resulted in a decrease in deposition rate together with a decrease in resistivity. It was found that the sheet resistances of Cu/Zr-N(−200 V)/Si contact system were lower than those of Cu/Zr-N(−50 V)/Si specimens after annealing at 650 °C. Cu/Zr-N(−200 V)/Si contact systems showed better thermal stability so that the Cu3Si phase could not be detected. |
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Keywords: | 81 07 &minus b |
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