Phase control of two-dimensional probe gain-absorption spectra in semiconductor quantum wells |
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| Institution: | 1. Amirkhanov Institute of Physics Russian Academy of Sciences, Dagestan Science Centre, Makhachkala, Russia;2. Prokhorov General Physics Institute Russian Academy of Sciences, Moscow, Russia;3. Dagestan States University, Makhachkala, Russia;1. Key Laboratory of Precision Opto-mechatronics Technology, Ministry of Education, Beihang University, Beijing 100191, China;2. College of Applied Sciences, Beijing University of Technology, 100 Pingleyuan Road, Beijing 100124, China;1. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, Yerevan 0025, Armenia;2. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;1. Laboratoire des Interfaces et des Matériaux avancés (LIMA), Tunisia;2. Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Tunisia;3. Unité de Recherche sur les Hétéro-Epitaxies et Applications (URHEA), Tunisia;4. Université Monastir, Faculté des Sciences de Monastir, Département de Physique, Avenue de l’environnement, 5019 Monastir, Tunisia |
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| Abstract: | We investigate the two-dimensional gain and absorption of a weak probe field via two orthogonal standing-wave lasers in a four-level inverted-Y asymmetric quantum well system. We find that, due to the spatial-dependent quantum interference effect, the spatial distribution of the 2D gain and absorption spectra can be easily controlled by adjusting the system parameters. More importantly, the probe gain-absorption spectrum can be controlled at a particular position and the 2D localization effect is indeed achieved efficiently. Thus, our scheme shows the underlying probability for the formation of the 2D localization effect by using a QW structure. |
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| Keywords: | Standing-wave lasers Quantum well system Gain and absorption spectra |
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