Modulating microstructure and optical properties of hydrogenated nanocrystalline silicon photovoltaic materials prepared under hydrogen diluted silane PECVD by various DC bias |
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| Affiliation: | 1. School of Applied Physics and Materials, Wuyi University, 22 Dongcheng Village, Jiangmen 529020, P.R. China;2. Department of Physics, Shanghai Maritime University, 1550 Haigang Avenue, Shanghai 201306, P.R. China;1. Center for Cloud Computing and Big Data, Department of Automation, Xiamen University, Xiamen 361005, China;2. Institute of Theoretical Physics and Astrophysics, Department of Physics, Xiamen University, Xiamen 361005, China;1. Department of Physics, Shahid Rajaee Teacher Training University, Lavizan, 16788-15811 Tehran, Iran;2. Department of Chemistry, Shahid Rajaee Teacher Training University, Lavizan, 16788-15811 Tehran, Iran;1. State Key Laboratory of Complex Electromagnetic Environmental Effects on Electronics and Information System, National University of Defense Technology (NUDT), Changsha 410073, China;2. Center for Optical and Electromagnetic Research, State Key Lab of MOI, Zhejiang University, Hangzhou 310058, China;1. Mechanical Engineering Department, Charotar University of Science and Technology, Changa, Gujarat, India;2. Mechatronics Engineering Department, G.H.Patel College of Engineering & Technology, Vallabh Vidyanagar, Gujarat, India |
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| Abstract: | Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were fabricated by plasma enhanced chemical vapor deposition under the various negative substrate bias voltages with hydrogen as a diluent of silane. The microstructure and optical properties of nc-Si:H thin films were studied by Raman scattering spectroscopy, X-ray diffraction (XRD), transmission electron microscopy, and optical transmission spectroscopy. Raman spectra and XRD pattern reveal that applying negative bias voltages at the moderate level favors the enhancement of crystalline volume fraction, increase of crystallite sizes and decrease of residual stress. We also demonstrated that the negative direct current bias can be used to modulate the volume fraction of voids, refractive index, absorption coefficient, compactness and ordered degree of nc-Si:H films. It is found that the film deposited at −80 V shows not only high crystallinity, size of crystallite, and static index n0 but also low residual stress and volume fraction of voids. Furthermore, the microstructural evolution mechanism of nc-Si:H thin films prepared at different bias voltages is tentatively explored. |
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| Keywords: | Nc-Si:H Negative DC bias Hydrogen diluted silane |
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