Electronic states of coupled quantum dot-ring structure under lateral electric field with and without a hydrogenic donor impurity期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Electronic states of coupled quantum dot-ring structure under lateral electric field with and without a hydrogenic donor impurity

Affiliation:	1. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, Yerevan 0025, Armenia;2. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;1. Physics Department, Faculty of Arts and Sciences, Aksaray University, Campus 68100 Aksaray, Turkey;2. Physics Department, Faculty of Sciences, Selcuk University, Campus 42031 Konya, Turkey;1. Department of Physics, Faculty of Science, Naresuan University, Phitsanulok 65000, Thailand;2. Research Center for Academic Excellence in Applied Physics, Naresuan University, Phitsanulok 65000, Thailand;1. Department of Chemistry, Hetampur Raj High School, Hetampur, Birbhum 731124, West Bengal, India;2. Department of Chemistry, Brahmankhanda Basapara High School, Basapara, Birbhum 731215, West Bengal, India;3. Department of Chemistry, Bishnupur Ramananda College, Bishnupur, Bankura 722122, West Bengal, India;4. Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal, India;1. Physics Department, Faculty of Arts and Science, Aksaray University, Campus 68100, Aksaray, Turkey;2. Physics Department, Faculty of Science, Selcuk University, Campus 42031, Konya, Turkey

Abstract:	A detailed investigation of the lateral electric field effect on single electron states in coupled quantum dot-ring structure has been systematically studied for cases with and without an on-center hydrogenic donor impurity. The single electron energy spectrum has been found using the effective mass approximation and an exact diagonalization technique. The electron ground state's probability density has been examined for different values of the confinement energies and depth of dot confinement relative to the bottom of the quantum ring and barrier thickness. The energy level's dependence on the electric field strength has been studied considering the effects of mentioned parameters of the structure and hydrogenic donor impurity.

Keywords:	Coupled dot-ring Lateral electric field Hydrogenic donor impurity
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