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Strain effects on electronic states and lattice vibration of monolayer MoS2
Affiliation:1. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, Shaanxi, China;2. College of Physics and Information Technology, Shaanxi Normal University, Xi’an 710062, Shaanxi, China;3. Department of Physics and Opt-electronic Engineering, Xi’an University of Arts and Science, Xi’an 710065, Shaanxi, China;1. Escuela de Física, Universidad Industrial de Santander, A. A. 678, Bucaramanga, Colombia;2. Peoples'' Friendship University of Russia, Miklujo-Maklaya, No. 6, Moscow, Russia;1. Department of Physics, University of Guilan, Rasht, Iran;2. Institute of Theoretical Physics and Astronomy, Vilnius University, A. Gostauto 12, LT-01108 Vilnius, Lithuania;1. A.F. Ioffe Physical-Technical Institute, the Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, Russia;2. Institute for Problems of Mechanical Engineering, the Russian Academy of Sciences, Bolsoy Prospect V.O. 61, St. Petersburg 199178, Russia;3. State Polytechnical University, Politechnicheskaya 29, St. Petersburg 195231, Russia
Abstract:
Keywords:Band gap  Electronic states  Phonon dispersion  Strain effect
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