GaAs pyramidal quantum dot coupled to wetting layer in an AlGaAs matrix: A strain-free system |
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| Affiliation: | 1. Department of Physics, Faculty of Science, Beirut Arab University, P.O.Box 11 5020 Riad El Solh 11072809 Beirut, Lebanon;2. Department of Physics, Faculty of Science, Alexandria University, Moharram Bek, Alexandria 21511, Egypt;1. Department of Physics, Cumhuriyet University, 58140, Sivas, Turkey;2. Department of Nanotechnology Engineering, Cumhuriyet University, 58140, Sivas, Turkey;1. Laboratoire de Physique des Matériaux et Modélisation des Systèmes, (LP2MS), Unité Associée au CNRST-URAC 08, University of Moulay Ismail, Physics Department, Faculty of Sciences, B.P. 11201 Meknes, Morocco;2. Université de Lorraine, LCP-A2MC, Institut de Chimie, Physique et Matériaux, 1 Bd. Arago, 57070 Metz, France;3. Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, 75120 Uppsala, Sweden;1. School of New Energy and Electronic Engineering, Yancheng Teachers University, Yancheng, 224051, China;2. Department of Physics, College of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006, China;3. Department of Physics, Guangxi Medical University, Nanning, Guangxi, 530021, China;1. Department of Chemistry, Brahmankhanda Basapara High School, Basapara, Birbhum 731215, West Bengal, India;2. Department of Chemistry, Bishnupur Ramananda College, Bishnupur, Bankura 722122, West Bengal, India;3. Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731235, West Bengal, India;1. Groupe d''Optoélectronique des Boites Quantiques de Semiconducteurs, Ecole Normale Supérieure de l''Enseignement Technique, Mohamed V University, Rabat, Morocco;2. Laboratoire Optoélectronique et Physico-chimie des Matériaux, Faculté des Sciences, Université Ibn Tofail, Kenitra, Morocco;3. Centre Régional des Métiers de l''Education et de Formation (CRMEF), Tanger, Morocco;4. Laboratory of Condensed Matter, Faculty of Sciences and Techniques, University of Hassan II, Mohammedia, Morocco;5. LCP-A2MC, Université de Lorraine, Metz, France;6. Laboratoire d''Electronique et Optique des Nanostructures de Semiconducteurs, Faculté des Sciences, Université chouaib doukali, El Jadida, Morocco |
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| Abstract: | In this contribution, the electronic and linear and nonlinear optical properties of pyramid-shaped GaAs quantum dots (QDs) coupled to wetting layer (WL) in an Al0.3Ga0.7As matrix have been investigated. This nanostructure is relaxed from strain effects due to very small lattice-mismatching. Three transitions of P-to-S, WL-to-P, and WL-to-S were considered and the corresponding transition dipole moments, oscillator strengths, and linear and nonlinear optical properties regarding to these transitions were investigated as a function of the QD height. The results showed that for P-to-S transition, which is a purely in-plane-polarized transition, the dependence of electronic and optical properties on the size is moderate and can be neglected. But for WL-to-P and WL-to-S transitions, which are in-plane- and z-polarized transitions, respectively, the electronic as well as optical properties are strongly size-dependent. Furthermore, a competition between WL-to-S and WL-to-P transitions was observed when the QD size changed. |
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| Keywords: | Strain-free GaAs/AlGaAs quantum dot Intersubband transitions Optical susceptibility Properties Wetting layer Polarization |
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