Operational improvement of AlGaN/GaN HEMT on SiC substrate with the amended depletion region |
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| Institution: | 1. Donbass State Engineering Academy, Kramatorsk 84313, Ukraine;2. Grupo de Materia Condensada UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia-UdeA, Calle 70 No. 52-21, Medellín, Colombia;3. Escuela de Ingeniería de Antioquia-EIA, Medellín, Colombia;4. Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, México;1. School of Material Science and Nanotechnology, Jadavpur University, Kolkata 700032, India;2. Thin Film and NanoScience Laboratory, Department of Physics, Jadavpur University, Kolkata 700032, India;1. Department of Mathematics and Physics,Hunan Institute of Engineering, Xiangtan 411104, China;2. The Cooperative Innovation Center of Wind Power Equipment and Energy Conversion, Xiangtan 411104, China;3. College of Physics and Electronic, Central South University, Changsha 410083, China |
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| Abstract: | In this paper, a high performance AlGaN/GaN High Electron Mobility Transistor (HEMT) on SiC substrates is presented to improve the electrical operation with the amended depletion region using a multiple recessed gate (MRG–HEMT). The basic idea is to change the gate depletion region and a better distribution of the electric field in the channel and improve the device breakdown voltage. The proposed gate consists of lower and upper gate to control the channel thickness. Also, the charge of the depletion region will change due to the optimized gate. In addition, a metal between the gate and drain including the horizontal and vertical parts is used to better control the thickness of the channel. The breakdown voltage, maximum output power density, cut-off frequency, maximum oscillation frequency, minimum noise figure, maximum available gain (MAG), and maximum stable gain (MSG) are some parameters for designers which are considered and are improved in this paper. |
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| Keywords: | AlGaN/AlN/GaN/SiC HEMT Electric field Depletion region RF applications |
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