Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

Affiliation:	1. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan, Armenia;2. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;3. Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica, Chile;4. SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom;5. Departamento de Física y Matemática Aplicada, Universidad de Navarra, 31080 Pamplona, Spain;1. Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2, France;2. Freiburg Institute for Advanced Studies, Albert-Ludwigs-Universität, Albertstr. 19, D-79104 Freiburg, Germany;1. Centro de Física de Materiales, Centro Mixto CSIC-UPV/EHU, Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain;2. Donostia International Physics Center (DIPC), Paseo Manuel de Lardizabal 4, E-20018 Donostia-San Sebastián, Spain;3. IKERBASQUE, Basque Foundation for Science, E-48013 Bilbao, Spain;4. Departamento de Química-Física, UPV/EHU, Apartado 644, 48080 Bilbao, Spain;5. Department of Physics, Shanghai University, 200444 Shanghai, People''s Republic of China;1. Kantonsschule Frauenfeld, Ringstrasse 10, CH-8500 Frauenfeld, Switzerland;2. Instituto de Física Interdisciplinar y Sistemas Complejos IFISC (UIB-CSIC), E-07122 Palma de Mallorca, Spain

Abstract:	The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-center hydrogenic donor impurity are investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue- or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure.

Keywords:	Coupled quantum dot-ring Lateral electric field Exact diagonalization method Hydrogenic donor impurity
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