Thickness effect on the band gap of magnetron sputtered Pb45Se45O10 thin films on Si |
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| Institution: | 1. Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China;2. Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620, USA;1. Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, Iran;2. Young Researchers Club, Shahre Kord Branch, Islamic Azad University, Shahre Kord, Iran;1. Department of Physics, GTN Arts College, Dindigul 624005, India;2. P.G. and Research Department of Physics, Government Arts College, Melur 625106, Madurai, India;3. Department of Chemical Engineering, College of Engineering, Kyung Hee University, 1732 Deogyeong-daero, Gihung, Yongin, Gyeonggi 446-701, South Korea;1. Kuang-Chi Institute of Advanced Technology, Shenzhen 518057, China;2. A.A. Galkin Donetsk Institute for Physics and Engineering of National Academy of Sciences, 83114 Donetsk, Ukraine |
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| Abstract: | Oxygen doped PbSe thin films with different thickness were grown on the Si (100) substrates by magnetron sputtering, and characterized using scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and physical properties measurement system. As the film thickness increased, the intensity of the (200) PbSe prominent diffraction peak increased, while the (220) peak almost vanished, indicating the primary growth direction. The change rate between the light and dark resistance increased with the film thickness, and the maximum of 64.76% was obtained. According to the density functional theory calculations and the experimental results, the band gap of the PbSe thin films decreased from 0.278 eV to 0.21 eV when doped with oxygen. Doping with oxygen during the deposition process is a viable way to prepare PbSe thin films with a tunable band gap. The band gap increased almost linearly with the lattice constant, confirmed by the calculated and experimental results. |
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| Keywords: | Lead selenide Thin film Doping Magnetron sputtering |
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