Fabrication of thin-film transistor based on self-assembled single-walled carbon nanotube network |
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| Institution: | 1. Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2, France;2. Freiburg Institute for Advanced Studies, Albert-Ludwigs-Universität, Albertstr. 19, D-79104 Freiburg, Germany;1. Kantonsschule Frauenfeld, Ringstrasse 10, CH-8500 Frauenfeld, Switzerland;2. Instituto de Física Interdisciplinar y Sistemas Complejos IFISC (UIB-CSIC), E-07122 Palma de Mallorca, Spain |
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| Abstract: | Thin-film transistor based on controllable electrostatic self-assembled monolayer single-wall carbon nanotubes (SWNTs) network has been fabricated by varying the density of nanotubes on the silicon substrate. The densities of SWNTs network have been investigated as a function of concentration and assembly time. It has been observed that the density of SWNTs network increases from 0.6 µm?2 to 2.1 µm?2, as the average on-state current (Ion) increases from 0.5 mA to 1.47 mA. The device has a current on/off ratio (Ion/Ioff) of 1.3×104 when Ion reaches to 1.34 mA. |
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| Keywords: | Thin film transistors SWCNTs Self-assembly |
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