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Carrier transport in Bi2Se3 topological insulator slab
Affiliation:1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore;2. Department of Physics, Northeastern University, Boston, MA 02115, USA;3. Graphene Research Centre and Department of Physics, National University of Singapore, Singapore 117542, Singapore;1. Donbass State Engineering Academy, Kramatorsk 84313, Ukraine;2. Grupo de Materia Condensada UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia-UdeA, Calle 70 No. 52-21, Medellín, Colombia;3. Escuela de Ingeniería de Antioquia-EIA, Medellín, Colombia;4. Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, México;1. School of Material Science and Nanotechnology, Jadavpur University, Kolkata 700032, India;2. Thin Film and NanoScience Laboratory, Department of Physics, Jadavpur University, Kolkata 700032, India
Abstract:Electron transport in Bi2Se3 topological insulator slabs is investigated in the thermal activation regime (>50 K) both in the absence (ballistic) and presence of weak and strong acoustic phonon scattering using the non-equilibrium Green function approach. Resistance of the slab is simulated as a function of temperature for a range of slab thicknesses and effective doping in order to gain a handle on how various factors interact and compete to determine the overall resistance of the slab. If the Bi2Se3 slab is biased at the Dirac point, resistance is found to display an insulating trend even for strong electron–phonon coupling strength. However, when the Fermi-level lies close to the bulk conduction band (heavy electron doping), phonon scattering can dominate and result in a metallic behavior, although the insulating trend is retained in the limit of ballistic transport. Depending on values of the operating parameters, the temperature dependence of the slab is found to exhibit a remarkably complex behavior, which ranges from insulating to metallic, and includes cases where the resistance exhibits a local maximum, much like the contradictory behaviors seen experimentally in various experiments.
Keywords:Topological Insulator  NEGF  Acoustic Phonons  Quantum Transport  Resistance
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