| In/GaAs(111)界面形成过程的电子能谱研究 |
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| 引用本文： | 丁训民,董国胜,杨曙,陈平,王迅.In/GaAs(111)界面形成过程的电子能谱研究[J].物理学报,1985,34(5):634-639. |
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| 作者姓名： | 丁训民 董国胜 杨曙 陈平 王迅 |
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| 作者单位： | 复旦大学现代物理研究所 |
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| 摘 要： | 用光电子能谱结合LEED图样分析的方法研究了In在非解理的GaAs(111)面上的界面形成过程。观察到在这一过程中三维In集团的生长起支配作用。发现对于所有研究过的n型样品,包括Ga终止的GaAs(111)-A面和As终止的GaAs(111)-B面,淀积In之前的表面费密能级均在VBM上面0.75±0.05eV处,在淀积过程中迅速移至VBM上面0.90±0.05eV处。
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| 收稿时间： | 1984-04-17 |
AN ELECTRON SPECTROSCOPY STUDY OF THE In/GaAs (111) INTERFACE FORMATION PROCESS |
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| DING XUN-MIN,DONG GUO-SHENG,YANG SHU,CHEN PING and WANG XUN.AN ELECTRON SPECTROSCOPY STUDY OF THE In/GaAs (111) INTERFACE FORMATION PROCESS[J].Acta Physica Sinica,1985,34(5):634-639. |
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| Authors: | DING XUN-MIN DONG GUO-SHENG YANG SHU CHEN PING and WANG XUN |
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| Abstract: | The interface formation process for In deposited on noncleaved GaAs (111) plane has been studied by means of photoemission speetroscopy combined with LEED pattern analysis. It is shown that the growth of three-dimensional In clusters dominates in this process. The surface Fermi level is found at 0.75±0.05 eV above VBM for all the investigated n-type samples prior to the deposition of In: these include both Ga-terminated GaAs(lll)-A and Asterminated GaAs (lll)-B faces. The Fermi level rapidly shifts to 0.90±0.05 eV above VBM during the deposition of In. |
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