Zeeman splitting of excited boron states in p-Ge |
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Authors: | G Jungwirt and W Prettl |
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Institution: | (1) Institut für Angewandte Physik, Universität Regensburg, D-8400 Regensburg, West Germany |
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Abstract: | The photothermal spectrum of shallow acceptors in p-Ge has been investigated at various magnetic field strengths up to 5.6 T at a temperature of 7.5 K by FIR-Fourier-spectroscopy. From the observed Zeeman splittings of the excited states of the boron acceptor the coefficients of the linear and quadratic field dependence have been evaluated andg-factors of theD-,C- and theG-transitions have been determined based on a standard group theoretical approach. |
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Keywords: | boron doped p-Ge shallow acceptors Zeeman-splitting |
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