| 有机薄膜晶体管中接触效应的研究 |
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| 引用本文： | 孙钦军,徐征,赵谡玲,张福俊,高利岩,田雪雁,王永生.有机薄膜晶体管中接触效应的研究[J].物理学报,2010,59(11):8125-8130. |
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| 作者姓名： | 孙钦军 徐征 赵谡玲 张福俊 高利岩 田雪雁 王永生 |
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| 作者单位： | 北京交通大学光电子技术研究所,发光与光信息技术教育部重点实验室,北京 100044 |
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| 基金项目： | 国家自然科学基金(批准号:10774013,10804006,10974013,60978060),国家高技术研究发展计划(批准号:2006AA03Z0412),教育部博士点基金(批准号20070004024),博士点新教师基金(批准号:20070004031),北京市科技新星计划(批准号:2007A024),国家杰出青年科学基金(批准号:60825407)资助的课题. |
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| 摘 要： | 研究了接触效应对有机薄膜晶体管性能的影响.首先在n型重掺杂Si片上制备了以MOO3修饰的Al电极为源漏电极的Pentacene基OTFTs(organic thin film transistors),器件场效应迁移率μef达到0.42 cm2/V ·s,阈值电压VT为-9.16 V,开关比4.7×103.通过中间探针法,对器件电势分布做了定性判断
关键词：
有机薄膜晶体管
场效应迁移率
接触效应
电荷漂移
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| 关 键 词： | 有机薄膜晶体管 场效应迁移率 接触效应 电荷漂移 |
| 收稿时间： | 2009-11-25 |
Contact effect in organic thin film transistors |
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| Sun Qin-Jun,Xu Zheng,Zhao Su-Ling,Zhang Fu-Jun,Gao Li-Yan,Tian Xue-Yan,Wang Yong-Sheng.Contact effect in organic thin film transistors[J].Acta Physica Sinica,2010,59(11):8125-8130. |
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| Authors: | Sun Qin-Jun Xu Zheng Zhao Su-Ling Zhang Fu-Jun Gao Li-Yan Tian Xue-Yan Wang Yong-Sheng |
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| Institution: | Institude of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education,Beijing 100044,China;Institude of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education,Beijing 100044,China;Institude of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education,Beijing 100044,China;Institude of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education,Beijing 100044,China;Institude of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education,Beijing 100044,China;Institude of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education,Beijing 100044,China;Institude of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education,Beijing 100044,China |
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| Abstract: | The contact effect on the performances of organic thin film transistors (OTFTs) is studied here. We fabricate Bottom-gated top-contact Pentacene-OTFTs on heavily doped n type Silicon wafers with using Al modified by MoO3 as source and drain electrodes. Field effect mobility μef of the OTFT reaches 0.42cm2/V ·s,the threshold voltage and the on/off current ratio arrive at -5.0 V and 4.7×103 respectively. The electric potential distribution in the channel is qualitively investigated by means of middle probe method (MPM) and the output curve is simulated by the charge drift method. Considering the contact effect,the μef is greatly improved to 1.1 cm2/V ·s,which indicates the importance of the contact engineering in OTFTs. |
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| Keywords: | organic thin film transistor field effect mobility contact effect charge drift |
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