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Carrier heating in quantum wells under optical and current injection of electron-hole pairs |
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| Authors: | L E Vorobjev M Ya Vinnichenko D A Firsov V L Zerova V Yu Panevin A N Sofronov P Thumrongsilapa V M Ustinov A E Zhukov A P Vasiljev L Shterengas G Kipshidze T Hosoda G Belenky |
| Institution: | 1. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia 2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia 3. St. Petersburg Academic University, Research and Education Center for Nanotechnology, Russian Academy of Sciences, St. Petersburg, 195220, Russia 4. Department of Electrical and Computer Engineering, State University of New York at Stony Brook, 11794, New York, USA |
| Abstract: | Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pumping in the spontaneous-emission mode has been studied. The electron temperature was determined as a function of the pumping intensity. The effect of the electric field on the photoluminescence spectrum was examined. The change in the carrier concentration with the drive current in the spontaneous- and stimulated-emission modes in InGaAsSb/InAlGaAsSb QWs was determined from electroluminescence spectra. The rise in the temperature of hot carriers, which results in the increase in the carrier concentration with the drive current, was roughly estimated. |
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