First-principles calculation of point-defective structures of B2-NiSc intermetallics

A pseudo-potential plane-wave method based on first principles was used to calculate the physical parameters of B2-NiSc intermetallics and the geometrical, energetic, and electronic structures of point defects. The possible types of point defects in B2-NiSc intermetallics were analyzed and predicted by comparing the formation enthalpy and formation energy for different kinds of point defect structures. The results show that Ni vacancy defects and Ni anti-position defects are the main point defects in the B2-NiSc intermetallics, and that these point defects emerge as double vacancy defects or double anti-position defects. When the double Ni atoms at Sc sites are in the first nearest neighborhood, the point defect structures are found to be the most stable. An analysis of the electronic structure of NiSc point defects shows that the Ni anti-position defect is more stable than the Sc vacancy defect in the Ni-rich alloy, and the Ni vacancy defect is more stable than the Sc anti-position defect in the Sc-rich alloy. These results are consistent with the energy calculation. Through analysis of C₁₁–C₁₂, G/B and Poisson's ratio, it was found that the Ni_Sc point defect has little effect on crystal plasticity, and that the V_Ni point defect improves crystal plasticity.