Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide |
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Authors: | Nenad Lalic and Jan Linnros |
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Affiliation: | Department of Electronics, Royal Institute of Technology Electrum 229, S-164 40 Kista-Stockholm, Sweden |
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Abstract: | Light emitting diodes (LED), continuously operable at room temperature, have been fabricated by Si+ ion implantation into SiO2 and subsequent annealing in order to form Si nanocrystals. A highly doped poly-Si layer was used to enhance injection into nanocrystals. Visible electroluminescence (EL) was observed from the LEDs with oxide thickness 180 Å for bias voltages above 8 V. The EL decay transient was similar to stretched-exponential decays observed for photoluminescence (PL) from Si nanocrystals. |
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Keywords: | Silicon nanocrystal Electroluminescence LED Ion implantation |
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