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Charge Properties of Thorium Implanted in Silicon Oxide |
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| Authors: | Kurelchuk U. N. Borisyuk P. B. Nikolaev A. V. Tkalya E. V. |
| Affiliation: | 1.National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Moscow, Russia ;2.Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991, Moscow, Russia ;3.Lebedev Physical Institute of the Russian Academy of Sciences, 119991, Moscow, Russia ;4.Nuclear Safety Institute of the Russian Academy of Sciences, 115191, Moscow, Russia ; |
| Abstract: | Physics of Atomic Nuclei - A study of thorium atoms implanted in silicon oxide was carried out within the density functional theory method. The charge properties of Th in the ThO2:nSiO2 and... |
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