On the model of divacancies in germanium

A model of a divacancy which explains a number of experimental facts for Ge exposed to a flow of accelerated electrons at temperature T=77 K is proposed. The model explains the absence of photoconduction associated with photoexcitation of infrared absorption bands at 0.44 and 0.52 eV corresponding to divacancies; the difference in the values of activation energy for divacancy energy levels determined by optical and electrical methods; and the existence of the limiting position of the Fermi level in the forbidden gap in the case of irradiation with large radiation fluxes.