合金三元和四元系无定形靶中离子射程研究

本文应用Vagard定律,由二元系投影射程R_p的线性组合计算合金三元或四元系R_p。计算的H⁺→GaAlAs,InAs,InGaAs,Be⁺→GaInSb和InAsSb,以及B⁺→Cd_0.2Hg_0.8Te多元系合金靶的R_p,与文献报道的实测值或计算值甚为符合。此外,还计算了H⁺→GaInAsP,GaAlAsSb和 关键词：

CALCULATION OF ION PROJECT RANGE ON AMORPHOUS TARGETS OF TERNARY AND QUARTERNARY ALLOYS

We have calculated the project range for ions on amorphous targets made of ternary or quarternary alloys. Our calculations are based upon Vagard's law, which establishes that the project range in multi-component system can be obtained by linear combination of those of its composing binary alloy compounds. The calculated project ranges of systems, H⁺→GaAlAs, InAs and InGaAs, Be⁺→ GalnSb and InAsSb, and B⁺ →Cd_0.2Hg_0.8Te, agree well with the experimental or calculated results published in literatures. The dependences of project range on implanting energy and composition in the processes H⁺→ GaInAsP and GaAlAsSb, and ions→ PbSnTe are also calculated.