Effect of dispersion degree of orientation on dielectric properties of (100)-oriented PST thin film |
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| Authors: | Xiaoting Li Tao Hu Biao Wang Wenjian Weng Gaorong Han Chenglu Song Ning Ma Piyi Du |
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| Institution: | 1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China;2. Creative Technology Research Institute, Zhejiang University, Hangzhou 310027, PR China |
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| Abstract: | (100) Oriented (PbxSr1−x)TiO3 (PST) thin films were prepared on indium tin oxide coated glass substrates by sol–gel technique with rapid thermal processing. The dielectric permittivity and tunability of the thin films with different dispersion degrees of orientation were investigated in detail by characterizing the full width at half maximum of their (100) peak based on rocking curves at different annealing temperatures. Influence of orientation dispersion on dielectric properties was exhibited in the tunable dielectric thin films. It shows that the dielectric constant and hence the tunability of the sol–gel derived PST thin films are improved with the decrease in the dispersion degree of orientation of the perovskite phase other than the increase in the content of crystalline phase in the thin films. The dielectric constant (capacitance) and figure of merit of the oriented thin films are 3–6 times and 1 times higher than that of randomly oriented thin film respectively. |
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| Keywords: | A (100) Oriented PST thin films B Sol&ndash gel process |
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