非离子型表面活性剂结合金刚石膜电化学氧化的新型抛光后晶片清洗工艺

本文针对抛光后晶片的颗粒和有机污染物提出了一种新型清洗方法，它结合了非离子表面活性剂和掺硼金刚石膜（BDD）阳极电化学氧化的优势。非离子表面活性剂可以在抛光后晶片上形成一层保护膜，使晶片表面颗粒易于去除。颗粒去除对比实验结果通过金相显微镜观察得知，体积比为1%的非离子表面活性剂的颗粒去除效果最佳。然而表面活性剂保护膜本身属于有机物，它最终也需要被去除。金刚石膜阳极电化学氧化（BDD-EO）可以用来去除有机物，因为它可以有效降解有机物。三个有机污染物去除对比实验分别为：一是先用非离子表面活性剂再用BDD-EO，二是单纯用BDD-EO去除有机物,第三种是用传统RCA清洗技术。通过XPS检测结果表明，用BDD-EO清洗的晶片表面的有机残留明显少于传统RCA技术，并且晶片表面的非离子表面活性剂也可以有效去除。

A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers

This paper presents a new cleaning process for particle and organic contaminants on polished silicon wafer surfaces. It combines a non-ionic surfactant with boron-doped diamond (BDD) film anode electrochemical oxidation. The non-ionic surfactant is used to remove particles on the polished wafer's surface, because it can form a protective film on the surface, which makes particles easy to remove. The effects of particle removal comparative experiments were observed by metallographic microscopy, which showed that the 1% v/v non-ionic surfactant achieved the best result. However, the surfactant film itself belongs to organic contamination, and it eventually needs to be removed. BDD film anode electrochemical oxidation (BDD-EO) is used to remove organic contaminants, because it can efficiently degrade organic matter. Three organic contaminant removal comparative experiments were carried out: the first one used the non-ionic surfactant in the first step and then used BDD-EO, the second one used BDD-EO only, and the last one used RCA cleaning technique. The XPS measurement result shows that the wafer's surface cleaned by BDD-EO has much less organic residue than that cleaned by RCA cleaning technique, and the non-ionic surfactant can be efficiently removed by BDD-EO. oindent