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基于杂质光伏效应的镍掺杂对砷化镓太阳电池性能的影响
引用本文:袁吉仁,洪文钦,邓新华,余启名.基于杂质光伏效应的镍掺杂对砷化镓太阳电池性能的影响[J].光子学报,2012,41(10):1167-1170.
作者姓名:袁吉仁  洪文钦  邓新华  余启名
作者单位:1. 南昌大学理学院,南昌,330031
2. 南昌大学理学院,南昌330031;毫米波国家重点实验室,南京210096
基金项目:江西省自然科学基金项目(No.2010GZW0042)、江西省自然基金(No.20122BAB202002)、江西省教育厅科技项目(No.GJJ12007)、光电子材料与技术国家重点实验室开放基金项目(KF2010-MS-05)和毫米波国家重点实验室开放基金项目(No.K201216)资助
摘    要:利用杂质光伏效应能够使太阳电池充分利用那些能量小于禁带宽度的太阳光子,从而提高电池的转换效率.为了更好地利用杂质光伏效应提高砷化镓太阳电池的转换效率,本文利用数值方法研究在砷化镓太阳电池中掺入镍杂质以形成杂质光伏太阳电池,分析掺镍对电池的短路电流密度、开路电压以及转换效率的影响;同时,探讨电池的陷光结构对杂质光伏太阳电池器件性能的影响.结果表明:利用杂质光伏效应掺入镍杂质能够增加子带光子的吸收,使得电池转换效率提高3.32%;转换效率的提高在于杂质光伏效应使电池的红外光谱响应得到扩展;另外,拥有良好的陷光结构是取得好的杂质光伏效应的关键.由此得出:在砷化镓太阳电池中掺镍形成杂质光伏太阳电池是一种能够提高砷化镓太阳电池转换效率的新方法.

关 键 词:太阳电池  砷化镓  杂质光伏效应    转换效率
收稿时间:2012/5/23

Influence of Nickel Impurity on the Performance of GaAs Solar Cells with Impurity Photovoltaic Effect
YUAN Ji-ren , HONG Wen-qin , DENG Xin-hua , YU Qi-ming.Influence of Nickel Impurity on the Performance of GaAs Solar Cells with Impurity Photovoltaic Effect[J].Acta Photonica Sinica,2012,41(10):1167-1170.
Authors:YUAN Ji-ren  HONG Wen-qin  DENG Xin-hua  YU Qi-ming
Institution:1(1 College of Science,Nanchang University,Nanchang 330031,China)(2 State Key Laboratory of Millimeter Waves,Southeast University,Nanjing 210096,China)
Abstract:The solar cell with impurity photovoltaic effect can make use of the solar photons with energies less than the bandgap so that its conversion efficiency could be improved. To improve the conversion efficiency of the GaAs solar cells by using impurity photovoltaic effect, the GaAs solar cells doped with nickel for impurity photovoltaic effect were investigated by numerical method. The influence of nickel-doping on the short-circuit current density, open-circuit voltage and conversion efficiency was investigated. The effect of trapping structure on the cell performance was discussed. The results show that an increase of the conversion efficiency 3.32% can be achieved due to the impurity photovoltaic effect. The improvement of the solar cell performance attributes to the absorption of some sub-band photons, which results in the extension of the infrared response. Moreover, a good light trapping should be required to obtain better device performance for solar cells with impurity photovoltaic effect. It can be concluded that nickel doping in GaAs solar cells with impurity photovoltaic effect is a promising way for higher efficiency.
Keywords:Solar cell  GaAs  Impurity photovoltaic effect  Nickel  Conversion efficiency
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