| Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy |
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| 作者姓名： | 王海莉 吴东海 吴兵朋 倪海桥 黄社松 熊永华 王鹏飞 韩勤 牛智川 I．Tangring S．M．Wang |
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| 基金项目： | Supported partly by the National Natural Science Foundation of China under Grand Nos 60607016 and 60625405, the National Basic Research Programme of China and the National High Technology Research and Development Programme of China. |
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| 摘 要： | We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm^2 ridge waveguide laser, the lazing wavelength is centred at 1.508 μm and the threshold current density is 667 A/cm^2 under pulsed operation. The pulsed lasers can operate up to 286 K.
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| 关 键 词： | 量子阱激光器 分子束外延 InGaAs异变量子阱 激光波长 高应变 |
| 收稿时间： | 2008-04-19 |
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