| HEMT的材料结构和二维电子气浓度的关系 |
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| 引用本文： | 李效白,崔立奇,张文俊,贾海强. HEMT的材料结构和二维电子气浓度的关系[J]. 微纳电子技术, 1999, 0(2) |
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| 作者姓名： | 李效白 崔立奇 张文俊 贾海强 |
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| 作者单位： | 信息产业部电子十三所专用集成电路国家重点实验室 |
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| 摘 要： | 给出了ＨＥＭＴ和ＰＨＥＭＴ的数学－物理模型。系统地描述了材料的隔离层、平面调制掺杂层、势垒耗尽层等材料结构尺寸和异质结界面二维电子气浓度及器件沟道电流之间的相互关系。
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| 关 键 词： | HEMT PHEMT 模型 异质结 二维电子气 MBE 材料 |
Relationship Between Structure Size of the Materials and 2 Dimensional Electric Gas Density |
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| Li Xiaobai,Cui Liqi,Zhang Wenjun,Jia Haiqiang. Relationship Between Structure Size of the Materials and 2 Dimensional Electric Gas Density[J]. Micronanoelectronic Technology, 1999, 0(2) |
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| Authors: | Li Xiaobai Cui Liqi Zhang Wenjun Jia Haiqiang |
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| Abstract: | The math physical model of HEMT and PHEMT has been presented in this paper.The relation has been detailed systematically between structure size of the mate rial space layer,plane modulated doped layer,depleted barrier layer and two dimensional electric gas density and channel current of the device in this paper. |
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| Keywords: | HEMT PHEMT Model Hetero structure 2DEG MBE Material |
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