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Interfacial reactions in As---Se/Zn
Authors:Sinn-wen Chen   Ming-horng Lin   Bo-rung Shie  Jinn-lung Wang
Affiliation:

a Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu 30043, Taiwan

b Chemical Systems Research Division, Chung-Shan Institute of Science and Technology, Lung-Tan, Taiwan, ROC

Abstract:As-Se-based chalcogenide glasses are IR transparent, and are an ideal braze for the ZnSe and ZnS. Interfacial reactions between As-Se and Zn were investigated using reaction couples As-50 at.% Se/Zn at 350°C, As-50 at.% Se/Zn at 370°C and As-60 at.% Se/Zn at 350°C. Cross-sections of reaction couples were analyzed by using optical microscopy and electron probe micro-analysis. Two phases were formed at the interface, and diffusion paths were glass/ZnSe/As2Zn3/Zn. Growth rates of the intermetallic layers were determined and at 350°C follow a parabolic law which indicates a diffusion-controlled mechanism.
Keywords:
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