| 高纯度砷化镓外延薄膜剩余受主杂质的研究 |
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| 引用本文： | 陈廷杰,吴灵犀,徐寿定,孟庆惠,于鯤,李永康.高纯度砷化镓外延薄膜剩余受主杂质的研究[J].发光学报,1981,2(2):58-63. |
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| 作者姓名： | 陈廷杰 吴灵犀 徐寿定 孟庆惠 于鯤 李永康 |
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| 作者单位： | 1. 中国科学院半导体研究所;2. 中国科学院物理研究所 |
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| 摘 要： | 本文用光致发光法(4.2°K和1.8°K)研究高纯度LPE-GaAs和VPE-GaAs的剩余受主杂质。实验结果表明,高纯LPE-CaAs的剩余受主杂质为C、Si、Ge,而在AsCl3-Ga-H2系统中生长的高纯VPE-GaAs的剩余受主杂质为C、Zn、Si、Ge。但是在AsCl3-Ga-N2系统中生长的高纯VPE-GaAs只检测到受主杂质碳。本文还研究某些生长条件对杂质引入的影响。
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| 收稿时间： | 1980-12-17 |
RESIDUAL ACCEPTOR IMPURITIES IN HIGH PURITY LPE AND VPE GaAs |
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| Chen Ting-jie,Wu Ling-Xi,Xu Shou-ding,Meng Qing-hui,Yu Kun,Li Yong-Kang.RESIDUAL ACCEPTOR IMPURITIES IN HIGH PURITY LPE AND VPE GaAs[J].Chinese Journal of Luminescence,1981,2(2):58-63. |
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| Authors: | Chen Ting-jie Wu Ling-Xi Xu Shou-ding Meng Qing-hui Yu Kun Li Yong-Kang |
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| Institution: | 1. Institute of Semiconductors, Academy of Sciences;2. Institute of Physics, Academy of Sciences |
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| Abstract: | Residual acceptor impurities in high purity LPE-GaAs and VPE-GaAs have been investigated by photoluminescence at 4.2K and 1.8K. The experimental results show that residual acceptor impurities are C, Si, Ge in high purity LPE-3aAs and C, Zn, Si, Ge in high purity VPE-GaAs grown in AsCl3-Ga-H2 System. However, in the high purity VPE-GaAs grown in AsCl3-Ga-N2 system only carbon can be detected as a dominant acceptor impurity. The effect of some growth conditions on incorporation of residual acceptor impurities heve also been studied. |
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