6H碳化硅衬底上硅碳锗薄膜的生长特性研究

采用低压热壁化学气相沉积法，在6H-SiC衬底(0001)面上生长了不同温度(1100—1250℃)，不同GeH₄流量比(6.3%—25%)的SiCGe薄膜样品，研究了SiCGe薄膜的表面形貌、生长特性以及样品中Ge组分含量的变化. 扫描电镜测试结果表明，SiCGe薄膜在低温下倾向于岛状生长模式，随着生长温度提高，岛状生长逐渐过渡到层状生长模式，同时伴有岛形状和密度的变化. X射线光电子能谱测试得出SiCGe样品中的Ge含量约为0.15％—0.62％，在其他参数不变的情况下，样品的G 关键词： 碳化硅 化学气相沉积 反相边界 岛状生长

Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates

SiCGe layers were grown on 6H-SiC (0001) substrates by low pressure hot wall chemical vapor deposition at different temperatures (1100℃—1250℃) and with different GeH₄ flow-rate ratios (6.3%—25%). Surface morphology, growth characteristics, and Ge contents of the samples were studied. Results of scan electron microscope images show that the SiCGe layers tend to grow in an island growth mode at lower temperatures, and the growth mode will change to the layer by layer mode accompanied by changes in island form and density as the growth temperature increases. X-ray photoelectron spectroscopy tests show that the Ge contents in the samples are in a range of 0.15％ to 0.62％, and they increase with the increase of GeH₄ flow rates and the decrease of growth temperatures when other growth parameters are kept constant. Additionally, antiphase boundary (APB) defects in the SiCGe layers were analyzed qualitatively.