Study of defects in proton irradiated GaAs/AlGaAs solar cells |
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| Authors: | Fenfen Zhan Yifan Zhang |
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| Institution: | a Surface Physics Laboratory, Laboratory of Advanced Materials, Fudan University, 220 Handan Road, Shanghai 200433, China
b School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: | The properties of GaAs/AlGaAs solar cells irradiated with 40, 70, 100 and 170 keV protons have been studied. Current-voltage (IV) measurement showed that the worst degradation was found in the cells irradiated by 100 keV protons. The degradation was found defect dependent. Defect profile was obtained by the stopping and range of ions in matter (SRIM) simulation and deep-level transient spectroscopy (DLTS) measurement. In order to obtain the deep-level defect profile in depletion layer by DLTS measurement, the traditional calculation formula of defect concentration has been modified. DLTS measurement showed good agreement with that of the SRIM simulation. |
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| Keywords: | 42 79 Ek 66 30 jp 67 80 dj 84 37 +q 62 25 Fg |
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