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Control of nanogap junction resistance by imposed pulse voltage
Authors:Yuichiro Masuda  Tsuyoshi Takahashi  Masatoshi Ono  Yasuhisa Naitoh
Institution:a Funai Electric Advanced Applied Technology Research Institute Inc., TCI 37A, 2-1-6, Sengen, Tsukuba-shi, Ibaraki 305-0047, Japan
b Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
Abstract:The resistance switching effect of a simple gold nanogap junction was investigated. This device exhibits highly reproducible switching and nonvolatile characteristics. The resistance switching was developed for dependence of the resistance on the applied voltage level. Four separate ranges of resistance were repeatedly controlled by programmed sequential application of voltage pulses, including the operation of data verification.
Keywords:81  07  &minus  b  81  16  Ta
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